Investigation on the effect of indium composition on ultrafast carrier dynamics in InGaN alloys
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=1/a=010903/pdf
Reference47 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Optical properties and electronic structure of InN and In-rich group III-nitride alloys
3. Exciton lifetimes in GaN and GaInN
4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
5. III–V compound multi-junction solar cells: present and future
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1. Study of the mechanisms of the phonon bottleneck effect in CdSe/CdS core/shell quantum dots and nanoplatelets and their application in hot carrier multi-junction solar cells;Nanoscale Advances;2023
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3. Review of the mechanisms for the phonon bottleneck effect in III–V semiconductors and their application for efficient hot carrier solar cells;Progress in Photovoltaics: Research and Applications;2022-03-17
4. Explore the correlation between intervalley scattering and phonon bottleneck effect on the hot carrier relaxation in bulk GaSb and InN for hot carrier solar cells;Journal of Applied Physics;2021-11-28
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