Nitrogen supply rate dependence of InGaN growth properties, by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
2. Small band gap bowing in In1−xGaxN alloys
3. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
4. Optical band gap of indium nitride
5. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Vertical profiling of ultrafast carrier dynamics in partially strain relaxed and strained InGaN grown on GaN/sapphire template of different In composition;Applied Surface Science;2023-01
2. Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells;Materials Today Energy;2023-01
3. Transferable InGaN Quantum Well Grown at Low Temperature on Amorphous Substrates by Plasma-Assisted Molecular Beam Epitaxy;Crystal Growth & Design;2021-06-03
4. Impact of Ex-Situ Heating on Carrier Kinetics in GaN/InGaN Based Green LEDs;ECS Journal of Solid State Science and Technology;2021-03-01
5. Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties;Journal of Applied Physics;2020-06-14
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3