Author:
Han Genquan,Zhao Bin,Liu Yan,Wang Hongjuan,Liu Mingshan,Zhang Chunfu,Hu Shengdong,Hao Yue
Funder
National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference37 articles.
1. Prospect of tunneling green transistor for 0.1V CMOS;Hu;IEDM Tech. Dig.,2010
2. Fabrication, characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing;Dewey;IEDM Tech. Dig.,2011
3. Tunnel field-effect transistor using InAs nanowire/Si heterojunction;Tomioka;Appl. Phys. Lett.,2011
4. Tunnel field-effect transistors with extremely low off-current using shadowing effect in drain implantation;Mori;Jpn. J. Appl. Phys.,2011
5. Performance improvement in novel germanium-tin/germanium heterojunction-enhanced p-channel tunneling field-effect transistor;Wang;Superlattices Microstruct.,2015
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献