Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation-Reference-Cited by-同舟云学术

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Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Published:2011-06-01 Issue:6S Volume:50 Page:06GF14
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mori Takahiro,Yasuda Tetsuji,Maeda Tatsuro,Mizubayashi Wataru,O'uchi Shin-ichi,Liu Yongxun,Sakamoto Kunihiro,Masahara Meishoku,Ota Hiroyuki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference20 articles.

1. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

2. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems;Japanese Journal of Applied Physics;2022-11-28

2. New types of resonant tunneling currents at Si-p/n junctions: one-dimensional model calculation;Japanese Journal of Applied Physics;2021-04-29

3. Mechanism of extraordinary gate-length dependence of quantum dot operation in isoelectronic-trap-assisted tunnel FETs;Applied Physics Express;2020-11-01

4. Implementation of Coulomb blockade transport on a semiconductor device simulator and its application to tunnel-FET-based quantum dot devices;Japanese Journal of Applied Physics;2020-03-18

5. Drain bias and position dependent performance degradation of dual-gate poly-Si TFTs with undoped region offsets;Semiconductor Science and Technology;2019-05-21

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