Performance Enhancement of Dielectric Engineered Doping Less InGaN Tunnel FET for Low Power Analog/Radio Frequency Applications
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-0055-8_14
Reference34 articles.
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3. Colinge JP (2008) FinFETs and other multi-gate transistors. Springer, New York
4. Bangsaruntip S, Cohen GM, Majumdar A, Sleight JW (2010) Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett 31(9):903–905
5. Wang PF, Hilsenbeck K, Nirschl T, Oswald M, Stepper C, Weis M, Schmitt-Landsiedel D, Hansch W (2004) Complementary tunneling transistor for low power application. Solid-State Electron 48(12):2281–2286
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