Author:
Nirschl Th.,Henzler St.,Fischer J.,Fulde M.,Bargagli-Stoffi A.,Sterkel M.,Sedlmeir J.,Weber C.,Heinrich R.,Schaper U.,Einfeld J.,Neubert R.,Feldmann U.,Stahrenberg K.,Ruderer E.,Georgakos G.,Huber A.,Kakoschke R.,Hansch W.,Schmitt-Landsiedel D.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Nirschl Th, Wang P-F, Webe C, Sedlmeir J, Heinrich R, Kakoschke R, et al. The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes. In: Electron devices meeting, 2004. IEDM technical digest IEEE international. 2004. p. 195–8.
2. Shockley W, Hopper WW. The surface controlled avalanche transistor. In: WESCON, proceedings of 1964. p. 12.1.
3. Fischer W. Field induced tunnel diode. 1973.
4. A new three-terminal tunnel device;Banerjee;IEEE Electron Dev Lett,1987
5. Three-terminal silicon surface junction tunneling device for room temperature operation;Koga;IEEE Electron Dev Lett,1999
Cited by
77 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献