Performance Analysis of InAs-GaAs Gate-all-around Tunnel Field Effect Transistors (GAA-TFET) for Analog/ RF applications

Abstract

Abstract The purpose of this study to explore the performance of InAs-GaAs Gate-all-around (GAA) tunnelling field effect transistors (TFETs) in analogue and RF applications. The TCAD tool was used to assess the device’s overall performance. In order to achieve the InAs-GaAs channel design, the suggested TFET features a gate oxide made of SiO2 near the drain and HfO2 near the source region. As a result of the hetero dielectric gate oxide being used, the tunnelling width at junction between drain and channel (JDC) and junction between source and channel (JSC) is reduced, and the ON-current at the drain-channel junction is increased (ION). Device simulations have revealed that the SiO2-HfO2 gate dielectric has a low off-current (IOFF) of 2.27 x 10−17 A/m, a high enhanced ION of 7.39 x 10−6 A/m. At the time of operation, the sub-threshold swing (SS) was 16.8 mV/dec. Because of its low power consumption, the device could potentially be a better choice for power management circuits used in energy harvesting applications, according to the findings.