Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage-Reference-Cited by-同舟云学术

Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage

Published:2013-06 Issue: Volume:58 Page:101-119
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Mandal A.,Verma U.,Chakrabarti S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices

2. Effect of strain-compensation in stacked 1.3μm InAs∕GaAs quantum dot active regions grown by metalorganic chemical vapor deposition

3. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs

4. Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

5. Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution

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1. A comprehensive analysis of strain profile in the heterogeneously coupled Stranski-Krastanov (SK) on Submonolayer (SML) quantum dot heterostructures;Journal of Alloys and Compounds;2020-12

2. Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage;Journal of Luminescence;2017-12

3. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots;Applied Surface Science;2017-02

4. Optimizations for Quaternary Alloy (InAlGaAs)-Capped InAs/GaAs Multilayer Quantum Dots;Impact of Ion Implantation on Quantum Dot Heterostructures and Devices;2017

5. Growth technique and effect of post growth annealing on the optical properties of In(Ga)As/GaAs quantum dot heterostructures;SPIE Proceedings;2016-09-15