Optimizations for Quaternary Alloy (InAlGaAs)-Capped InAs/GaAs Multilayer Quantum Dots
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-10-4334-5_3
Reference25 articles.
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3. P. Siverns, S. Malik, G. McPherson, D. Childs, C. Roberts, R. Murray et al., Scanning transmission-electron microscopy study of InAs/GaAs quantum dots. Phys. Rev. B 58, R10127–R10130 (1998)
4. Y.I. Mazur, Z.M. Wang, G. Tarasov, M. Xiao, G. Salamo, J. Tomm, et al., Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures. Appl. Phys. Lett. 86, 063102–063102-3 (2005)
5. J. Tatebayashi, N. Nuntawong, P.-S. Wong, Y. Xin, L. Lester, D. Huffaker, Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices. J. Phys. D: Applied Physics 42, 073002 (2009)
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