Scanning transmission-electron microscopy study of InAs/GaAs quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R10127/fulltext
Reference21 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers
3. Prevention of gain saturation by multi-layer quantum dot lasers
4. Temperature dependent lasing characteristics of multi-stacked quantum dot lasers
5. A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes
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