Temperature dependent lasing characteristics of multi-stacked quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120426
Reference15 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
3. Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self‐organized on GaAs (311)B substrates
4. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
5. Low threshold, large To injection laser emission from (InGa)As quantum dots
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