Author:
Mao Kun,Qiao Ming,Zhang WenTong,Zhang Bo,Li Zhaoji
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Design of a P-JFET Compatible with CMOS Technology;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28
2. Study of Low Pinch-Off Voltage JFET in 500V High Voltage Process;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26
3. A 500-V High ON-BV Parasitic JFET With an Optimized Drift Region;IEEE Transactions on Electron Devices;2019-03
4. Design of a 700 V DB-nLDMOS Based on Substrate Termination Technology;IEEE Transactions on Electron Devices;2015-12