A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC

Author:

Chen Wanjun,Zhang Bo,Li Zhaoji

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Integrated high-voltage detector in 600V SPIC by using FFLR;Han,2001

2. Discrete validation of a smart power ASIC (SPIC) for a distributed power system;Lokhandwala,2004

3. Optimum VLD makes SPIC better and cheaper;Xing-bi,2001

4. A nobel double RESURF LDMOS with multiple rings in non-uniform drift region;wu,2004

5. Zia Hossain, Mohamed Imam, Joe Fulton, Masami Tanaka, Double-resurf 700V N-channel LDMOS with best-in-class on-resistance, International Symposium on Power Semiconductor Devices & ICs (ISPSD'2002), 2002, pp. 137–140.

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1. A review of high-voltage integrated power device for AC/DC switching application;Microelectronic Engineering;2020-08

2. The differences between N ‐ and N + buried layers in improving the breakdown voltage of RESURF LDMOSFETs;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-12-10

3. Effect of SOI LDMOS Epitaxial Layer Thickness on Breakdown Voltage;2018 International Symposium on Computer, Consumer and Control (IS3C);2018-12

4. Temperature Effects on Resistance of Power Devices;2016 International Symposium on Computer, Consumer and Control (IS3C);2016-07

5. Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics;Superlattices and Microstructures;2016-01

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