Novel partially depleted SOI MOSFET for suppression floating-body effect: An embedded JFET structure
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
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4. Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1−xGex dual source structure;Zhu;ELSEVIER Mater. Sci. Eng. B,2004
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2. A suggested nanoscale partially depleted SOI-MOSFET (PDSOI) by built-in tunneling diodes- improvement on short channel effects and frequency features;Materials Science and Engineering: B;2023-10
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