Complete depletion area in SOI junctionless FETs by multiple buried P-type pockets
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy,Fluid Flow and Transfer Processes
Link
https://link.springer.com/content/pdf/10.1140/epjp/s13360-023-04147-2.pdf
Reference27 articles.
1. J.-P. Colinge, Multiple-gate SOI MOSFETs. Solid. State. Electron. 48, 897–905 (2004). https://doi.org/10.1016/j.sse.2003.12.020
2. D. Flandre, J.P. Colinge, J. Chen, D. De Ceuster, J.P. Eggermont, L. Ferreira, B. Gentinne, P.G.A. Jespers, A. Viviani, R. Gillon, J.P. Raskin, A. Vander Vorst, D. Vanhoenacker-Janvier, F. Silveira, Fully-depleted SOI CMOS technology for low-voltage low-power mixed digital/analog/microwave circuits. Analog Integr. Circuits Signal Process. 21, 213–228 (1999). https://doi.org/10.1023/A:1008321919587
3. A. Abbasi, A.A. Orouji, A silicon/indium arsenide source structure to suppress the parasitic bipolar-induced breakdown effect in SOI MOSFETs. Mater. Sci. Semicond. Process. 16, 1821–1827 (2013). https://doi.org/10.1016/j.mssp.2013.06.022
4. D. Madadi, Investigation of junctionless fin-FET characterization in deep cryogenic temperature: DC and RF analysis. IEEE Access. 10, 130293–130301 (2022). https://doi.org/10.1109/ACCESS.2022.3228165
5. D. Madadi, S. Mohammadi, Junction-less SOI FET with an embedded p+ Layer: investigation of DC, RF, and negative capacitance characteristics. SILICON (2023). https://doi.org/10.1007/s12633-023-02315-8
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