Funder
Inter-University Accelerator Centre
Department of Science and Technology, Ministry of Science and Technology, India
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces
Reference58 articles.
1. Atomic layer-deposited platinum in high-k/metal gate stacks;Henkel;Semicond. Sci. Technol.,2009
2. Electric-pulse-induced reversible resistance change effect in magnetoresistive films;Liu;Appl. Phys. Lett.,2000
3. Nanoionics-based resistive switching memories;Waser;Nanosci. Technol. A Collect. Rev. from Nat. Journals.,2009
4. The Resistive Switching Characteristics of TiN/HfO 2 /Ag RRAM Devices with Bidirectional Current Compliance;Sun;J. Electron. Mater.,2019
5. K.H. Bhavsar, U.S. Joshi, B.V. Mistry, S.A. Khan, D.K. Avasthi, Memristive switching induced by 100 MeV Ag7+ ion irradiation in Ag/La0.7Sr0.3MnO3/Ag planar structures, https://doi.org/10.1080/10420150.2011.578640. 166 (2011) 718–723. https://doi.org/10.1080/10420150.2011.578640.
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献