Memristive switching induced by 100 MeV Ag7+ion irradiation in Ag/La0.7Sr0.3MnO3/Ag planar structures
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
http://www.tandfonline.com/doi/pdf/10.1080/10420150.2011.578640
Reference20 articles.
1. Ion and electron irradiation-induced effects in nanostructured materials
2. Nanoionics-based resistive switching memories
3. Electric-pulse-induced reversible resistance change effect in magnetoresistive films
4. High-Throughput Characterization of Metal Electrode Performance for Electric-Field-Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures
5. Transient response during resistance switching in Ag∕Pr0.7Ca0.3MnO3∕Pt thin films
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