Nanoionics-based resistive switching memories-Reference-Cited by-同舟云学术

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Nanoionics-based resistive switching memories

Published:2009-08 Issue: Volume: Page:158-165
ISSN:
Container-title:Nanoscience and Technology
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Author:

WASER RAINER¹²,AONO MASAKAZU³⁴

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, 52056 Aachen, Germany

2. Institut für Festkörperforschung/CNI—Center of Nanoelectronics for Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany

3. Nanomaterials Laboratories, National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. ICORP/Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

Publisher

Co-Published with Macmillan Publishers Ltd, UK

Cited by 77 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reservoir Computing With Dynamic Reservoir using Cascaded DNA Memristors;IEEE Transactions on Biomedical Circuits and Systems;2024-02

2. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications;ACS Applied Electronic Materials;2023-12-29

3. Dual‐Mode Operation of Epitaxial Hf_0.5Zr_0.5O₂: Ferroelectric and Filamentary‐Type Resistive Switching;physica status solidi (a);2023-11-22

4. Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO₂-Based Artificial Neurons;Nano Letters;2023-10-24

5. Low Frequency 1/f Conductance Noise in Memristors;Advanced Memory Technology;2023-10-09

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