Low Frequency 1/f Conductance Noise in Memristors

Abstract

Recently memristors have emerged as one of the most promising candidates for the development of next-generation memory technology due to their simple structure and good reproducibility. Designing resistive memory devices for practical use needs an in-depth understanding of electron transport mechanisms and their noise characteristics. The noise characteristics of devices implicate their suitability for potential use in technological applications. Low-frequency 1/f conductance noise spectroscopy can also give insight into the transport mechanism leading to memristive phenomena. Therefore, sources of noise in devices are widely studied. This chapter provides a detailed overview of the 1/f conductance noise measurement which has been used to investigate a broad range of electronic devices including memristors and many other condensed matter systems. A summary of electronic noise analyses on various classes of memristors to determine the usefulness toward comprehending the operation of practical memristor devices. Finally, we present an outlook for the future development of memristors and the importance of their noise characteristics.