Microscopic aspects of Si-Ge heterojunction formation-Reference-Cited by-同舟云学术

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Microscopic aspects of Si-Ge heterojunction formation

Published:1980-05 Issue:6 Volume:34 Page:409-412
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Nannarone S.,Perfetti P.,Quaresima C.,Quaresima C.,Savioa A.,Bertoni C.M.,Calandra C.,Manghi F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Angle‐resolved photoemission measurements of band discontinuities in the GaAs‐Ge heterojunction

2. Denley, D., MILLS, K.A. and SHIRLEY, D.A., J. Vac. Sci. Technol. (in press).

3. Ge–GaAs(110) interface formation

4. Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic Structure

5. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverse-Photoemission Studies of Si and III-V Compounds;Physica Scripta;1989-01-01

2. Unoccupied surface-state band on Si(111) 1×1-Ge;Physical Review B;1988-06-15

3. Molecular beam epitaxy and reconstructed surfaces;Applied Physics A Solids and Surfaces;1985-11

4. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7);Surface Science;1985-06

5. Electronic structure of Si and Ge (111) surfaces and of the Si-Ge(111) interface;Physical Review B;1985-02-15

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