The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)-Reference-Cited by-同舟云学术

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The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)

Published:1985-06 Issue:2-3 Volume:155 Page:413-431
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Gossmann H.-J,Feldman L.C,Gibson W.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference48 articles.

1. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates

2. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy

3. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

4. MeV ion scattering for surface structure determination

5. Materials Analysis by Ion Channeling;Feldman,1982

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1. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28

2. Extremely dense arrays of germanium and silicon nanostructures;Physics-Uspekhi;2008

3. Behaviors of surfactant atoms on Si(001) surface;Journal of Electron Microscopy;2004-08-01

4. Electronic structure of monolayer and double-layer Ge on Si(001);Physical Review B;2003-02-18

5. Scanning tunneling microscopy of SiGe alloy surfaces grown on Si by molecular beam epitaxy;Surface Science;2002-09

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