Electronic structure of monolayer and double-layer Ge on Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.085310/fulltext
Reference36 articles.
1. Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface
2. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
3. Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)
4. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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1. Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates;Applied Physics Letters;2010-02-15
2. Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon;Journal of Computational Electronics;2007-01-18
3. Simulations of germanium epitaxial growth on the silicon (100) surface incorporating intermixing;Physica E: Low-dimensional Systems and Nanostructures;2006-05
4. Kinetic Lattice Monte Carlo Simulations of Silicon and Germanium Epitaxial Growth on the Silicon<tex>$;IEEE Transactions On Nanotechnology;2005-05
5. Kinetic lattice Monte Carlo simulations of germanium epitaxial growth on the silicon (100) surface incorporating Si–Ge exchange;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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