Simulations of germanium epitaxial growth on the silicon (100) surface incorporating intermixing-Reference-Cited by-同舟云学术

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Simulations of germanium epitaxial growth on the silicon (100) surface incorporating intermixing

Published:2006-05 Issue:1-2 Volume:32 Page:207-210
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Akis R.,Ferry D.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Existence of a stable intermixing phase for monolayer Ge on Si(001)

2. Ab Initiostudy of the mixed dimer formation in Ge growth on Si(100)

3. Electronic structure of monolayer and double-layer Ge on Si(001)

4. Diffusional Kinetics of SiGe Dimers on Si(100) Using Atom-Tracking Scanning Tunneling Microscopy

5. Reconstruction and intermixing in thin Ge layers on Si(001)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of intermixing effects in Ge/Si(001) growth using kinetic Monte Carlo simulations;Journal of Crystal Growth;2022-04

2. Investigation of Growth Kinetics, Inter-Diffusion and Quality of Ge-on-Si Epitaxial Film by a Three-Step Growth Approach;ECS Journal of Solid State Science and Technology;2012

3. Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon;Journal of Computational Electronics;2007-01-18

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