Inverse-Photoemission Studies of Si and III-V Compounds
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1989/i=T25/a=031/pdf
Reference56 articles.
1. Investigation of Intrinsic Unoccupied Surface States at GaAs(110) by Isochromat Spectroscopy
2. Intrinsic unoccupied surface states at GaAs(110)
3. Conduction-band dispersion, critical points, and unoccupied surface states on GaAs(110): A high-resolution angle-resolved inverse photoemission study
4. Unoccupied surface-state band on Si(111) 2×1
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1. The electronic properties of Si(001)–Bi(2 × n);Journal of Physics: Condensed Matter;2005-01-15
2. Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning;Physical Review B;1996-09-15
3. Conduction-band states and surface core excitons in InSb(110) and other III-V compounds;Physical Review B;1994-09-15
4. Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center;Physical Review B;1993-11-15
5. Inverse photoemission studies on InSe conduction band;Applied Surface Science;1992-01
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