The electronic properties of Si(001)–Bi(2 × n)
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/17/i=4/a=001/pdf
Reference42 articles.
1. The Si (100) surface. III. Surface reconstruction
2. Screened-exchange LDA methods for films and superlattices with applications to theSi(100)2×1surface and InAs/InSb superlattices
3. Structure of Bi nanolines: using tight binding to search parameter space
4. Valence- and conduction-band densities of states for tetrahedral semiconductors: Theory and experiment
5. Core-level photoemission study of 2D ordered Bi/Si(100) interfaces
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1. Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study;Physical Review B;2017-12-13
2. Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces;Journal of Physics: Condensed Matter;2016-06-14
3. Study of the Interaction of Atoms of the IV- and V-th Groups with Si(001) and Ge(001) Surfaces;Ukrainian Journal of Physics;2015-02
4. Bismuth Growth on Ge(111): Evolution of Morphological Changes From Nanocrystals to Films;Ukrainian Journal of Physics;2014-08
5. Density-functional calculations for self-assembled Bi-nanolines on the InAs(100) surface;Journal of Applied Physics;2009-09
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