Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic Structure
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.39.109/fulltext
Reference10 articles.
1. Prediction of semiconductor heterojunction discontinuities from bulk band structures
2. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface
3. (110) surface states in III-V and II-VI zinc-blende semiconductors
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