Unoccupied surface-state band on Si(111) 1×1-Ge
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.10429/fulltext
Reference18 articles.
1. Observation of Order-Disorder Transitions in Strained-Semiconductor Systems
2. Theoretical study of Si/Ge interfaces
3. Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surface
4. Si(111)7×7-Ge and Si(111)5×5-Ge surfaces studied with angle-resolved photoemission
5. Surface electronic structure of Si(111)7×7-Ge and Si(111)5×5-Ge studied with photoemission and inverse photoemission
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of silicon and germanium on Cu(111) studied by angle-resolved direct and inverse photoemission;Physical Review B;1990-06-15
2. Inverse photoemission from semiconductors;Surface Science Reports;1990-01
3. Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces;NATO ASI Series;1989
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