Electronic structure of strained Sin/Gen(001) superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
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1. Structural characterization of Si/Ge superlattices grown on an Si(001) surface by molecular beam epitaxy;Thin Solid Films;1994-01
2. Electronic structure of Ge-Si superlattices grown on Ge (001);Semiconductor Science and Technology;1991-07-01
3. Electronic structure of (111)Si/Ge superlattices;Journal of Physics: Condensed Matter;1990-09-24
4. Optimization of growth parameters for direct band gap SiGe superlattices;Materials Science and Engineering: B;1990-09
5. A strain dependent study of the (001) Si6Ge6superlattice;Semiconductor Science and Technology;1990-07-01
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