Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334055
Reference11 articles.
1. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
2. Almost perfect epitaxial multilayers
3. Profiling of SiGe superlattices by He backscattering
4. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates
5. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates
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