Electronic structure of (111)Si/Ge superlattices
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/2/i=38/a=009/pdf
Reference24 articles.
1. ELECTRONIC STRUCTURE OF Si-Ge STRAINED SUPERLATTICES
2. Theory of optical transitions in Si/Ge(001) strained-layer superlattices
3. Electronic structure of strained Sin/Gen(001) superlattices
4. Electronic Structure and Optical Properties of Si-Ge Superlattices
5. Structural and electronic properties of epitaxial thin-layerSinGensuperlattices
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1. Thermoelectric transport in strained Si and Si/Ge heterostructures;Journal of Physics: Condensed Matter;2012-06-19
2. Electronic structure of ordered silicon alloys: Direct-gap systems;Physical Review B;1996-11-15
3. Direct gap Si/Ge superlattices strained along the [110] and [111] directions;Applied Surface Science;1996-08
4. Electronic and optical properties of strained Si/Ge superlattices grown along the [110] and [111] directions;Semiconductor Science and Technology;1995-12-01
5. Electronic structure of the Si6/Ge6(111) superlattice strained to a Ge substrate;Semiconductor Science and Technology;1993-12-01
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