Electronic Structure and Optical Properties of Si-Ge Superlattices
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.60.2221/fulltext
Reference9 articles.
1. Structurally induced optical transitions in Ge-Si superlattices
2. Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)
3. New optical transitions in strained Si-Ge superlattices
4. New optical transitions in Si-Ge strained superlattices
5. Theory of optical transitions in Si/Ge(001) strained-layer superlattices
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1. Laser-Driven Hole Trapping in a Ge/Si Core-Shell Nanocrystal: An Atomistic Configuration Interaction Perspective;J PHYS CHEM C;2015
2. Laser-Driven Hole Trapping in a Ge/Si Core–Shell Nanocrystal: An Atomistic Configuration Interaction Perspective;The Journal of Physical Chemistry C;2015-10-30
3. Configuration-Interaction Excitonic Absorption in Small Si/Ge and Ge/Si Core/Shell Nanocrystals;The Journal of Physical Chemistry C;2012-02-09
4. Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates;Journal of Applied Physics;2011-10-15
5. Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium;Physical Review Letters;2009-04-15
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