New optical transitions in Si-Ge strained superlattices
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.59.1022/fulltext
Reference13 articles.
1. Recent developments in silicon molecular beam epitaxy
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. Structurally induced optical transitions in Ge-Si superlattices
4. Simplified LCAO Method for the Periodic Potential Problem
5. New localized-orbital method for calculating the electronic structure of molecules and solids: Covalent semiconductors
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5. Optical Properties of Si−Ge Semiconductor Nano-Onions;The Journal of Physical Chemistry B;1999-04-01
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