Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.1310/fulltext
Reference18 articles.
1. Observation of Order-Disorder Transitions in Strained-Semiconductor Systems
2. Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices
3. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
4. Theory of silicon superlattices: Electronic structure and enhanced mobility
5. Optical Absorption Probability for the Zone-Folding Induced Quasi-Direct Gap in Ge(x)Si(1−x)/Si Strained Layer Superlattices
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