Structure and electronic properties of cleaved Si(111) upon Ge adsorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Microscopic aspects of Si-Ge heterojunction formation
2. Low energy electron loss spectroscopy of Si–Ge interfaces
3. Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interface
4. Evidence for semiconductor-semiconductor interface states: Si(111) (2 × 1)-Ge
5. Surface reconstruction and interface formation in Si and GaAs
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1. Solid phase epitaxy of Ge films on CaF2/Si(111);Applied Surface Science;2007-10
2. Theory of semiconductor surface reconstruction;Reports on Progress in Physics;1997-05-01
3. Ge/Si(100) heterostructures: a photoemission and low-energy yield spectroscopy investigation;Applied Surface Science;1996-08
4. Inverse-Photoemission Studies of Si and III-V Compounds;Physica Scripta;1989-01-01
5. Unoccupied surface-state band on Si(111) 1×1-Ge;Physical Review B;1988-06-15
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