Electrical and chemical stability engineering of solution-processed indium zinc oxide thin film transistors via a synergistic approach of annealing duration and self-combustion process-Reference-Cited by-同舟云学术

Electrical and chemical stability engineering of solution-processed indium zinc oxide thin film transistors via a synergistic approach of annealing duration and self-combustion process

Published:2017-08 Issue:12 Volume:43 Page:8956-8962
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Kim Da Eun,Cho Sung Woon,Kim Young Been,Kim Kyung Su,Yoon Dea Ho,Jung Sung Hyun,Kang Won Jun,Cho Hyung Koun

Funder

NRF

Ministry of Science, ICT and Future Planning

KETEP

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. The effects of active layer thickness and annealing conditions on the electrical performance of ZnON thin-film transistors;Park;J. Alloy. Compd.,2016

2. Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors;Kim;RSC Adv.,2015

3. Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors;Xu;Ceram. Int.,2015

4. Bi-layer Channel Structure-based Oxide Thin-film Transistors Consisting of ZnO and Al-doped ZnO with Different Al Compositions and Stacking Sequences;Cho;Electron. Mater. Lett.,2015

5. The effects of gallium on solution-derived indium oxide-based thin film transistors manufactured on display glass;Choi;RSC Adv.,2015

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