Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors-Reference-Cited by-同舟云学术

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

Published:2021 Issue:54 Volume:11 Page:34392-34401
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Bukke Ravindra Naik¹^ORCID,Jang Jin¹^ORCID

Affiliation:

1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Hoegi-dong, Dongdaemun-gu, Seoul 130-701, South Korea

Abstract

The performance of metal–oxide TFTs should be further improved for the applications of next-generation displays. Here, the developments of gel-derived GITZO for n-channel and CGTSO for p-channel TFTs are demonstrated.

Funder

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA04787F

Reference59 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

3. High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

4. Two‐Step Plasma Treatment Designed for High‐Performance Flexible Amorphous ZnAlSnO Thin‐Film Transistors Replacing Thermal Annealing

5. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

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