Two‐Step Plasma Treatment Designed for High‐Performance Flexible Amorphous ZnAlSnO Thin‐Film Transistors Replacing Thermal Annealing-Reference-Cited by-同舟云学术

Two‐Step Plasma Treatment Designed for High‐Performance Flexible Amorphous ZnAlSnO Thin‐Film Transistors Replacing Thermal Annealing

Published:2020-07-14 Issue:8 Volume:6 Page:2000233
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lu Rongkai¹,Lu Jianguo¹^ORCID,Wei Xishuo²,Yue Shilu¹,Li Siqin¹,Lu Bojing¹,Zhao Yi³,Zhu Liping¹,Chen Lingxiang⁴,Ye Zhizhen¹^ORCID

Affiliation:

1. State Key Laboratory of Silicon MaterialsSchool of Materials Science and EngineeringZhejiang University Hangzhou 310027 P. R. China

2. Department of Physics and AstronomyUniversity of California Irvine CA 92697 USA

3. College of Information Science and Electronic EngineeringZhejiang University Hangzhou 310027 China

4. Key Laboratory for Biomedical Engineering of Ministry of EducationCollege of Biomedical Engineering and Instrument ScienceZhejiang University Hangzhou 310027 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000233

Reference36 articles.

1. Ultrathin amorphous ZnGexSnO films for high performance ultra-thin-film transistors

2. Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Effect of dual-dielectric hydrogen-diffusion barrier layers on the performance of low-temperature processed transparent InGaZnO thin-film transistors

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