The effects of gallium on solution-derived indium oxide-based thin film transistors manufactured on display glass-Reference-Cited by-同舟云学术

The effects of gallium on solution-derived indium oxide-based thin film transistors manufactured on display glass

Published:2015 Issue:114 Volume:5 Page:93779-93785
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Choi Chang-Ho¹²³⁴,Su Yu-Wei⁵⁶⁷⁸,Lin Liang-Yu⁹¹⁰⁸,Cheng Chun-Cheng⁹¹⁰⁸,Chang Chih-hung¹²³⁴

Affiliation:

1. Oregon Process Innovation Center/Microproduct Breakthrough Institute and School of Chemical, Biological & Environmental Engineering

2. Oregon State University

3. Corvallis

4. USA

5. Department of Materials Science and Engineering

6. National Chiao Tung University

7. Hsinchu 30050

8. Taiwan

9. AU Optronics Corporation

10. Hsinchu

Abstract

Amorphous IGO film was fabricated on display glass substrate and applied for TFTs. In particular, we studied the effect of gallium component on device performances.

Funder

Directorate for Mathematical and Physical Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA16392G

Reference40 articles.

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2. Review paper: Transparent amorphous oxide semiconductor thin film transistor

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

5. Low-temperature, solution-processed metal oxide thin film transistors

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