Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors-Reference-Cited by-同舟云学术

Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors

Published:2015 Issue:84 Volume:5 Page:68392-68396
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kim Bokyung¹²³⁴⁵,Park Si Yun¹²³⁴⁵,Ko Jieun¹²³⁴⁵,Kim Young-Jae¹²³⁴⁵,Kim Youn Sang¹²³⁴⁵

Affiliation:

1. Program in Nano Science and Technology

2. Graduate School of Convergence Science and Technology

3. Seoul National University

4. Seoul 151-742

5. Republic of Korea

Abstract

To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO and Li doped ZnO TFTs. The Li dopant enhanced the field effect mobility and sustained the variation in V_on of the ZnO TFTs.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA11480B

Reference29 articles.

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