Etching damage and its recovery in n-GaN by reactive ion etching-Reference-Cited by-同舟云学术

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Etching damage and its recovery in n-GaN by reactive ion etching

Published:2003-06 Issue:1-2 Volume:334 Page:188-192
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Chen Z.Z.,Qin Z.X.,Tong Y.Z.,Ding X.M.,Hu X.D.,Yu T.J.,Yang Z.J.,Zhang G.Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Depth and thermal stability of dry etch damage in GaN Schottky diodes

2. Ji-Myon Lee, Ki-Myung Chang, Sang-Woo Kim, Chul Huh, In-Hwan Lee, Seong-Ju Park, J. Appl. Phys. 87 (2000) 7667.

3. Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes

4. Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN

5. Electrical and optical changes in the near surface of reactively ion etched n-GaN

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly efficient and atomic scale polishing of GaN via plasma-based atom-selective etching;Applied Surface Science;2023-05

2. Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma;Coatings;2021-02-25

3. Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors;Journal of Applied Physics;2018-09-14

4. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes;Scientific Reports;2016-06-10

5. Optical Properties of Irradiated Epitaxial GaN Films;Ukrainian Journal of Physics;2014-01

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