Production of low-electron-temperature electron cyclotron resonance plasma with large area using 915MHz microwave
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference12 articles.
1. Charge accumulation effects on profile distortion in ECR plasma etching
2. Electron Cyclotron Resonance Plasma Sources and Their Use in Plasma-Assisted Chemical Vapor Deposition of Thin Films
3. Hukumoto Y, Kinoshita T. Proceedings of the 10th Symposium on Plasma Electronics, 1999. p. 99 [in Japanese].
4. Substrate dependence of initial growth of microcrystalline silicon in plasma‐enhanced chemical vapor deposition
5. Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma.
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1. Regulating the uniformity of DLC films in ECR plasma with negative substrate biasing;Surface and Coatings Technology;2019-05
2. Development and plasma characterization of an 850 MHz surface-wave plasma source;AIP Advances;2017-10
3. Effect of magnetic field profile on the uniformity of a distributed electron cyclotron resonance plasma;Physics of Plasmas;2013-07
4. Development of a 915 MHz ECR plasma source;Vacuum;2013-01
5. Generating electron cyclotron resonance plasma using distributed scheme;Applied Physics Letters;2012-08-06
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