Substrate dependence of initial growth of microcrystalline silicon in plasma‐enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363565
Reference8 articles.
1. Electrical properties and degradation kinetics of compensated hydrogenated microcrystalline silicon deposited by very high‐frequency‐glow discharge
2. In situ ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growth
3. Insituspectroellipsometry study of the nucleation and growth of microcrystalline silicon
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