Electrical properties and degradation kinetics of compensated hydrogenated microcrystalline silicon deposited by very high‐frequency‐glow discharge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358992
Reference20 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. The Staebler-Wronski effect in microcrystalline silicon films
3. Transient and steady-state optoelectronic properties of μc-Si:H
4. Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique
5. Highly Conductive Microcrystalline Silicon Layers for Tunnel Junctions in Stacked Amorphous Silicon based Solar Cells.
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