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Si-incorporated amorphous indium oxide thin-film transistors

Published:2019-07-22 Issue:9 Volume:58 Page:090506
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Aikawa Shinya,Nabatame Toshihide,Tsukagoshi Kazuhito

Funder

Grants-in-Aid for Scientific Research

Japan Synchrotron Radiation Research Institute

Cooperative Research Program of the Institute for Joining and Welding Research at Osaka University

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://iopscience.iop.org/article/10.7567/1347-4065/ab2b79/pdf

Reference142 articles.

1. Drift-mobility measurements in amorphous semiconductors using traveling-wave method

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

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4. Research progress of high mobility metal oxide semiconductor thin film transistors;CHIN J LIQ CRYST DIS;2024

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