Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD Technique

Abstract

AbstractWe report on the preparation and characterization of phosphorus doped gc-Si:H films produced by the very high frequency glow discharge (VHF-GD) at a plasma excitation frequency of 70 MHz. We present a systematic study of the deposition parameters i.e. hydrogen dilution of silane, VHF power density, gas phase doping ratio and deposition temperature and their influences on the electrical and structural properties of the material. In contrast to 13.56 MHz GD the VHF plasma conditions favour microcrystalline formation at low power densities; the resulting conductivities are significantly higher than those obtained at 13.56 MHz.