Author:
Bouhdada A.,Nouacry A.,Bakkali S.,Touhami A.,Marrakh R.
Reference12 articles.
1. Relation between the leakage currents and the defects created in oxide and interface in short channel NMOS transistor;Bouhdada;Microelectronics Journal,1997
2. Influence of technological parameters and temperature on substrate current modelling in short channel NMOS devices;Bouhdada;A.C.S.M., Fr.,1995
3. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET'S;Hermans;IEEE Trans. Elec. Dev.,1988
4. Caractérisation et propriétés physiques des défauts induits dans les transistors MOS submicroniques par injection des porteurs chauds;Vuillaume;Journal de Physique III,1992
5. A. Hassein-Bey, S. Cristoloveanu, Proceedings of Insulating Films on Semiconductors. 91 Liverpool, UK, 1991, p. 251.
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