Modelling of the surface potential evolution for a stressed submicronic MOSFET-Reference-Cited by-同舟云学术

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Modelling of the surface potential evolution for a stressed submicronic MOSFET

Published:2000-02 Issue:2 Volume:31 Page:91-94
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Marrakh R.,Bouhdada A.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices;Li;IEEE Trans. Electron. Dev.,1997

2. Direct lateral profiling of hot-carrier-induced oxide charge and interface traps in thin gate MOSFET's;Chen;IEEE Trans. Electron. Dev.,1998

3. unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET's;Ang;IEEE Trans. Electron. Dev.,1998

4. A new approach to modeling the substrate current of pre-stressed and post-stressed MOSFET's;Yang;IEEE Trans. Electron. Dev.,1995

5. Degradation of thing tunnel gate oxide under constant Fowler–Nordheim current stress for a Flash EPROM;Park;IEEE Trans. Electron. Dev.,1998

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