Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection-Reference-Cited by-同舟云学术

Modelling and Characterization of Submicron P-Channel MOSFET's Locally Degraded by Hot Carrier Injection

Published:1991 Issue: Volume:225 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Hassein-Bey A.,Cristoloveanu S.

Abstract

ABSTRACTThe influence of the localized defective channel region formed by hot carrier injection on the basic characteristics of P-channel transistors is systematically investigated and modeled. A practical method of parameter extraction in stressed P-MOSFET's is proposed. It is based on the comparison of Ids(Vg) characteristics before and after stress in weak and strong inversion.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. Relationship between MOSFET degradation and hot-electron-induced interface-state generation

2. 3. Hassein-Bey A. and Cristoloveanu S. , proceeding of Insulating Film On Semiconductors, edited by IOP Publishing Limited Of Techno House (in press).

3. Parameter extraction method for inhomogeneous MOSFETs locally damaged by hot carrier injection

4. Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear region

5. Experimental determination of short-channel MOSFET parameters

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1. Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents;Microelectronics Journal;1999-01

2. A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1993-04