Charge collection efficiency in heavily irradiated silicon diodes-Reference-Cited by-同舟云学术

Charge collection efficiency in heavily irradiated silicon diodes

Published:1998-08 Issue:2-3 Volume:412 Page:238-246
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Beattie L,Brodbeck T.J,Chilingarov A,Hughes G,Ratoff P,Sloan T

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. CERN LHCC/97-17; ATLAS TDR 5, 30 April 1997.

2. Study of neutron irradiated silicon counters with a fast amplifier

3. Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C

4. Pion-induced damage in silicon detectors

5. J.D. Richardson, Ph.D. Thesis, University of Liverpool, 1995.

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