Author:
Bates S.,Munday D.J.,Parker M.A.,Anghinolfi F.,Chilingarov A.,Ciasnohova A.,Glaser M.,Jarron P.,Lemeilleur F.,Santiard J.C.,Gößling C.,Lisowski B.,Pilath S.,Rolf A.,Bonino R.,Clark A.G.,Kambara H.,Wu X.,Fretwurst E.,Lindström G.,Schulz T.,Moorhead G.F.,Taylor G.N.,Tovey S.N.,Hawkings R.,Weidberg A.,Teiger J.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
7 articles.
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1. Carrier lifetimes in heavily irradiated silicon diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-02
2. Charge collection efficiency in heavily irradiated silicon diodes;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1998-08
3. Pion-induced damage in silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-09
4. Some recent results of the silicon detector radiation damage study by the RD2 collaboration;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1995-06
5. Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between −20°C and +20°C;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1995-06